On Oct. 3, 1950, three scientists at Bell Labs in New Jersey received a U.S. patent for what would become one of the most important inventions of the 20th century — the transistor. John Bardeen, ...

Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.

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Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

This week, at the IEEE International Reliability Physics Symposium (IRPS) 2025, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates that, ...