Abstract: In nanosheet field-effect transistors (NSFETs), the scaling of the cell height (CH) is constrained by strict design rules related to gate extension (GE), gate cut (GC), and device-to-device ...
For a minimal example of how to use the environment framework, refer to examples/simple-calculator. For the environment and training data used in our paper, see AgentBench FC. For reproducing the ...
Abstract: With the advent of the big data era, we often deal with datasets containing a large number of redundant features, and in this context, dimensionality reduction of data becomes crucial. To ...
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