SemiQ continues to expand its Gen3 QSiC MOSFET portfolio with 1200-V power modules offering high current density and low thermal resistance. The new seven-device lineup includes high-current S3 ...
SemiQ Inc, a developer of SiC solutions, has announced an expansion of its third-generation QSiC MOSFET product line, including devices with what it claims are industry-leading current density and ...
Shanghai Maritime University’s Yan Zhang recently created a thermal impedance model of the SiC power module. Silicon carbide power devices have seen a strong demand in electric-vehicle traction ...
Abstract: This paper proposed a co-design framework for high power high voltage wide bandgap (WBG) power module packaging that is generalized to reflect diverse design requirements across device ...
Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
ROHM has developed the DOT-247, a 2-in-1 SiC moulded module, suitable for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the ...
DOT-247 retains the versatility of TO-247 package while achieving design flexibility and higher power density Rohm has developed the DOT-247 a 2-in-1 SiC moulded module (SCZ40xxDTx, SCZ40xxKTx), for ...
Integrating liquid-metal packaging into a SiC half-bridge power module is an innovative solution to longstanding challenges. Silicon carbide power devices offer high-level performance in power ...
SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories. SemiQ’s high-performance 1200V SiC modules are tested to above 1400V and are designed to ...
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