Abstract: Broadband spectroscopic ellipsometry (BBSE) has been successfully used to characterize and measure layer thicknesses in complex GaN/AIGaN/Ainfilm stacks using the KLA SpectraShape 10K ...
Abstract: Fully depleted silicon-on-insulator (FD-SOI) wafers with very thin Si top layers in the range of ten nanometers have to fulfill very strict uniformity requirements in the Å range across the ...
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