Abstract: In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the ...
Abstract: We present an RF equivalent circuit model for GeSi quantum confined stark effect (QCSE) electro-absorption modulator (EAM) integrated in a 300 mm Si photonics platform. The model ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback