A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...

This figure depicts the synthesis of metallic 1D mirror twin boundaries through Van der Waals epitaxial growth (top) and the large-area 2D semiconductor integrated circuit constructed based on these ...

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The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

Researchers unveil a roadmap for 2D transistor gate stack design, marking a key step toward ultra-efficient chips that could replace silicon technology. For decades, silicon-based CMOS technology has ...

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...