TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
Tokyo – Toshiba Corp. has developed a new cell structure for embedded DRAM on silicon-on-insulator wafers that takes advantage of SOI's specific characteristics. The cell will be an essential ...
Implemented in a standard 90-nm SOI process, the memory cell can be as small as 0.1 µm 2. That's about one-tenth the size of the smallest SRAM cells and less than half the size of most DRAM cells.
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
At the recent IEEE International Electron Devices Meeting (IEDM) in Washington, D.C., chipmakers presented papers on several technologies, including one unlikely topic—DRAM scaling. For years, it was ...
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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
eWEEK content and product recommendations are editorially independent. We may make money when you click on links to our partners. Learn More. IBM researcher Dr. Robert Heath Dennard has won one of ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer ...
Information on a supposed DRAM breakthrough has been running hot across the wires, but the press release from Semiconductor Research Corporation (SRC) that's sparked techie interest across the ...
NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...
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